Work

High- κ HfO2/ZrO2 superlattice for BEOL-compatible GAAFET memory device

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0274127

Authors: Chen-You Wei, Kuei-Chun Liao, Yi-Ju Yao, Cheng-En Wu, Chien-Lung Chen, Chih-Chao Yang, Fu-Ju Hou, Guang-Li Luo, Yung-Hsien Wu, Yung-Chun Wu

Institutions: National Tsing Hua University, Taiwan Semiconductor Manufacturing Company (Taiwan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Awards: Sige/Si Super-Lattice Channel Fe-Gaafet and Multi-Level Cell Experiment and Tcad Simulation, Develop Industrially Applicable Three-Dimensional Metrology for Semiconductor Innovation( II )

OpenAlex ID: W4411419281

FWCI: 0.693

Cites: 26

Cited by: 3

Related to: 10