Infinite selectivity in dry etching process for high-aspect-ratio hole using C7HF7 gas plasma
Year: 2025
Type: article
DOI: 10.1116/6.0004582
Institution: KIOXIA Corporation (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4411423446
