Work

Enhanced drain current density in AlGaN/GaN CAVET through multi-channel composite isolation layers

Year: 2025

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ade61d

Authors: Yanjun Wu, Xingyu Luo, Lin Zhang, Manjing Wang, Sheng Gao

Institutions: Chongqing University of Posts and Telecommunications, China Resources (China)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G6362074931

OpenAlex ID: W4411443336

FWCI: 0.646

Cites: 34

Cited by: 2

Related to: 10