Work

Degradation behavior of deep ultraviolet LEDs: the role of polarization induced doping in p-AlGaN layer

Year: 2025

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ade600

Authors: Jianghong Gao, Qiushuang Chen, Hongyu Liu, Mingyue Lou, Ge Gao, Chenglong Xu, Yaju Wei, Naixin Liu, Jianchang Yan, Li Chen, Wei Guo, Jichun Ye

Institutions: Ningbo University, Chinese Academy of Sciences, Ningbo Institute of Industrial Technology, Institute of Semiconductors, Yongjiang Laboratory

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Key Research and Development Program of China

Award: G2409923358

OpenAlex ID: W4411443381

FWCI: 1.24

Cites: 41

Cited by: 4

Related to: 10