Work

Effect of Asymmetric Structures On the Performance of AlGaN/GaN Bilateral IMPATT Device

Year: 2025

Type: article

Source: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

DOI: 10.1109/tcad.2025.3581475

Authors: Yang Dai, Yukun Li, Leiyu Gao, Pengzhan Wang, Weiwei Li, Jing Zuo, Cheng Chen, Wu Zhao

Institution: Northwest University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Foundation Research Project of Jiangsu Province

Awards: G1036581151, G2122263488

OpenAlex ID: W4411446694

FWCI:

Cites: 29

Cited by:

Related to: 10