Oriented p-type CuI thin film growth on n-SiC epitaxial layer for ultraviolet light detection
Year: 2025
Type: article
Abstract: The absence of high-quality copper iodide (CuI) films significantly limits their application in transparent optoelectronics. This study investigated the growth of CuI films on silicon carbide (SiC) substrates and evaluates their performance in ultraviolet detection. Initially, copper (Cu) films were deposited on SiC substrates using magnetron sputtering, followed by iodization to form CuI films. The continuous and smooth CuI films grew along the (111) plane. The obtained heterojunction CuI/SiC exhibited a high On-Off ratio of 4.33 × 10 6 , a rapid response time (rise time 250 ms, fall time 172 ms), a high responsivity of 68 mA/W and a high detectivity of 1.56 × 10 11 Jones.
Source: Materials Letters
Authors: Xia Yang, Yanfei Lv, Junhua Xi, Li Fu, Fei Chen, Shichao Zhao
Institution: Hangzhou Dianzi University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,870
OpenAlex ID: W4411449587