Silicon Oxycarbide Thin Films Produced by Hydrogen-Induced CVD Process from Cyclic Dioxa-Tetrasilacyclohexane
Year: 2025
Type: article
Abstract: Silicon oxycarbide coatings are the subject of research due to their exceptional optical, electronic, anti-corrosion, etc., properties, which make them attractive for a number of applications. In this article, we present a study on the synthesis and characterization of thin SiOC:H silicon oxycarbide films with the given composition and properties from a new organosilicon precursor octamethyl-1,4-dioxatetrasilacyclohexane (2D2) and its macromolecular equivalent—poly(oxybisdimethylsily1ene) (POBDMS). Layers from 2D2 precursor with different SiOC:H structure, from polymeric to ceramic-like, were produced in the remote microwave hydrogen plasma by CVD method (RHP-CVD) on a heated substrate in the temperature range of 30–400 °C. SiOC:H polymer layers from POEDMS were deposited from solution by spin coating and then crosslinked in RHP via the breaking of the Si-Si silyl bonds initiated by hydrogen radicals. The properties of SiOC:H layers obtained by both methods were compared. The density of the cross-linked materials was determined by the gravimetric method, elemental composition by means of XPS, chemical structure by FTIR spectroscopy, and NMR spectroscopy (13C, 29Si). Photoluminescence analyses and ellipsometric measurements were also performed. Surface morphology was characterized by AFM. Based on the obtained results, a mechanism of initiation, growth, and cross-linking of the CVD layers under the influence of hydrogen radicals was proposed.
Source: Materials
DOI: 10.3390/ma18122911
Authors: Agnieszka Walkiewicz-Pietrzykowska, Krzysztof Jankowski, Jan Kurjata, Rafał Dolot, Romuald Brzozowski, Joanna Zakrzewska, Paweł Uznanski
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,137
OpenAlex ID: W4411452333