Year: 2025
Type: article
Abstract: The development of artificial intelligence has resulted in significant challenges to conventional von Neumann architectures, including the separation of storage and computation, and power consumption bottlenecks. The new generation of brain-like devices is accelerating its evolution in the direction of high-density integration and integrated sensing, storage, and computing. The structural and information transmission similarity between memristors and biological synapses signifies their unique potential in sensing and memory. Therefore, memristors have become potential candidates for neural devices. In this paper, we have designed an optoelectronic memristor based on a ZnO/Cu2O structure to achieve synaptic behavior through the modulation of electrical signals, demonstrating the recognition of a dataset by a neural network. Furthermore, the optical synaptic functions, such as short-term/long-term potentiation and learn-forget-relearn behavior, and advanced synaptic behavior of optoelectronic modulation, are successfully simulated. The mechanism of light-induced conductance enhancement is explained by the barrier change at the interface. This work explores a new pathway for constructing next-generation optoelectronic synaptic devices, which lays the foundation for future brain-like visual chips and intelligent perceptual devices.
Source: Electronics
Authors: Chen Meng, Hongxin Liu, Tong Li, Jin Luo, Sijie Zhang
Institutions: Sichuan University, Guizhou University of Engineering Science
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,896
OpenAlex ID: W4411456445