Bias voltage-switchable metal-insulator transition in 2D van der Waals TMDs FETs: Role of tunneling barriers
Year: 2025
Type: article
Abstract: Two-dimensional transition metal dichalcogenides (2D TMDs) with metal-insulator transition (MIT) has garnered significant attention for their potential in elucidating electronic state regulation mechanisms and advancing novel electronic devices, ultra-low power switches, and memory technologies. Generally, MIT behavior is often obscured by Schottky barrier (SB). Previous approaches, such as using four-probe methods or barrier-free van der Waals (vdW) semimetal electrodes, have aimed to eliminate the influence of SB on MIT. However, these methods are either complicated by intricate fabrication and testing processes or limited by the availability of suitable semimetal electrodes. Here, we demonstrate a bias voltage (Vds)-switchable MIT in pure vdW TMDs FETs for the first time, driven by Vds-tunable effective SB and charge injection mechanisms. We identify a convert voltage (Vconvert), which can be reduced by eliminating extra tunneling barriers introduced by vdW gaps before the inherent SB. This work offers comprehensive perspective on how tunneling barriers influences MIT and introduces a straightforward approach to fabricate MIT-based electronic devices.
Source: Nano Research
Authors: Shida Huo, Fanying Meng, Zhe Zhang, Yuan Xie, Xiaodong Hu, Enxiu Wu
Institution: Tianjin University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $5,290
OpenAlex ID: W4411459492