Work

Electrical Tunability in 3-Gated Reconfigurable Transistor for Analog/RF Applications

Year: 2025

Type: article

Abstract: The potential of electrical tunability in a 3-gated (3G) Reconfigurable Field Effect Transistor (RFET) for analog/RF applications is investigated through four distinct configurations (R2-IG-LVT, R1-IG-Ambi, R3-IG-LVT, and R2-IG-HVT). The electrical connections through two program gates (PG) and one control gate (CG) in 3G-RFET supports the implementation of configurations suitable for low-VTH (R2-IG-LVT and R3-IG-LVT) and high-VTH (R2-IGHVT), phase follower/reversal (R2-IG-LVT), frequency doubler (R1-IGAmbi), high gain (R3-IG-LVT), lower parasitic capacitance (R2-IG-LVT and R3-IG-LVT), and higher linearity (R3-IG-LVT) applications. Results showcase electrical tunability as an opportunity to realize many analog/RF features–in–one nanoscale 3G-RFET.

Source: IEEE Journal of the Electron Devices Society

DOI: 10.1109/jeds.2025.3581677

Authors: Chinmayi Adoni, Sandeep Semwal, Manish Gupta, Jean-Pierre Raskin, Abhinav Kranti

Institutions: Indian Institute of Technology Indore, Birla Institute of Technology and Science, Pilani - Goa Campus, Birla Institute of Technology and Science, Pilani, UCLouvain

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,350

Funder: Birla Institute of Technology and Science, Pilani