Work

CNTFET-Based 12T Sram Cell Design With Enhanced Write Margin and Read Performance Using Indep Technique

Year: 2025

Type: conference-paper

DOI: 10.1109/icdsbs63635.2025.11031697

Authors: Praveen R, Suryaprakash TSS, Kirubasankar K, R. M. Bommi

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4411484343

FWCI:

Cites: 14

Cited by:

Related to: 10