Work

Experimental Analysis of Effects of JFET Region on Single-Event Gate Damage Induced by Heavy Ion in SiC MOSFETs

Year: 2025

Type: conference-paper

Source: International Conference on Radiation Effects of Electronic Devices (ICREED)

DOI: 10.1109/icreed65908.2025.11036230

Authors: Zhiwen Zhang, Qingwen Song

Institution: Xidian University

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411552479

FWCI:

Cites: 12

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Related to: 10