Work

Study on Dose Response of 300 nm Gate Oxide Process PMOS

Year: 2025

Type: conference-paper

Source: International Conference on Radiation Effects of Electronic Devices (ICREED)

DOI: 10.1109/icreed65908.2025.11036188

Authors: Mengjun Sun, Jing Sun, Chengfa He, Qi Guo, Lin Wen

Institutions: Chinese Academy of Sciences, Xinjiang Technical Institute of Physics & Chemistry

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411552567

FWCI:

Cites: 6

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Related to: 10