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A Single-Event Hardened SiC MOSFET Based on Localized Carrier Lifetime Control Region

Year: 2025

Type: conference-paper

Source: International Conference on Radiation Effects of Electronic Devices (ICREED)

DOI: 10.1109/icreed65908.2025.11036244

Authors: Leshan Qiu, Yun Bai, Yan Chen, Jieqin Ding, Xinyu Liu

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, University of Chinese Academy of Sciences

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411552582

FWCI:

Cites: 8

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Related to: 10