Work

2D TCAD Simulation of Transient Dose Rate Effect in 130nm SOI CMOS Inverters

Year: 2025

Type: conference-paper

Source: International Conference on Radiation Effects of Electronic Devices (ICREED)

DOI: 10.1109/icreed65908.2025.11036195

Authors: Xiuyu Zhang, Yangli Xin

Institution: China Academy of Engineering Physics

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411552610

FWCI:

Cites: 4

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Related to: 10