Work

A Comparative Study of Total Ionizing Dose and Heavy-Ion Irradiation Effects on n-Channel and p-Channel SGT MOSFETs

Year: 2025

Type: conference-paper

Source: International Conference on Radiation Effects of Electronic Devices (ICREED)

DOI: 10.1109/icreed65908.2025.11036183

Authors: Yuan Wang, Xiaozong Huang, Rui Yang, Jie Jiang, Fan Xiang, Feng Yang

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411552780

FWCI:

Cites: 9

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Related to: 10