Work

Comparative Investigation on TID-Induced Threshold Voltage Shift for 1200V Asymmetric Trench SiC MOSFET by Experiment and Simulation

Year: 2025

Type: conference-paper

Source: International Conference on Radiation Effects of Electronic Devices (ICREED)

DOI: 10.1109/icreed65908.2025.11036221

Authors: Tao Liu, Rongyao Ma, Zhiyu Wang, Qian Liu, Hongshen Wang, Jian Shen, Juan Luo, Shengdong Hu

Institution: Chongqing University

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411552787

FWCI: 2.277

Cites: 10

Cited by: 1

Related to: 10