Work

Effect of number of quantum wells on the operational and spectral characteristics of strained InGaAs semiconductor laser diode

Year: 2025

Type: article

Source: Physica Scripta

DOI: 10.1088/1402-4896/ade7c4

Author: Ivan B Karomi

Institution: University of Mosul

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411593728

FWCI: 0.676

Cites: 46

Cited by: 3

Related to: 10