Work

Variability Analysis of Ferroelectric FinFETs for Embedded Non-Volatile Memory Applications

Year: 2025

Type: article

Abstract: In this study, we conduct a comparative analysis of the process variation induced variability – specifically the random ferroelectric/dielectric phase variation, the metal work function variation, and the line edge roughness – in various ferroelectric field-effect transistors (FeFETs) at the 3 nm technology node, including ferroelectric FinFET (Fe-FinFET), one-sided ferroelectric-metal FinFET (FeM-FinFET), and FeM-FinFET. These variabilities are incorporated into TCAD simulations to quantitatively examine the variation of threshold voltages. As a result, the FeM-FinFET can reduce variability by an average of 12.4% compared to the Fe-FinFET structure and by an average 55% compared to the one-sided FeM-FinFET structures.

Source: IEEE Access

DOI: 10.1109/access.2025.3582799

Authors: Byeongju Ha, Dongyeong Kim, Taekhan Yoon, Sola Woo

Institution: Pukyong National University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,075

Funders: Korea Foundation, National Research Foundation of Korea