Year: 2025
Type: article
Abstract: Emerging non-volatile memory (NVM) technologies are set to revolutionize computer architecture by addressing the limitations of traditional memory systems. As data volumes continue to surge due to advancements in artificial intelligence (AI), big data, and cloud computing, the demand for faster, more efficient, and resilient memory solutions has intensified. Technologies such as Phase-Change Memory (PCM), resistive random-access memory (ReRAM), and Magnetic RandomAccess Memory (MRAM) offer promising alternatives to conventional volatile memory like DRAM. PCM, in particular, stands out due to its ability to provide high speed, scalability, and non-volatility, making it suitable for a variety of applications including neuromorphic computing. These NVM technologies not only enhance performance but also reduce power consumption and improve data retention capabilities. The integration of these advanced memories into the memory hierarchy could lead to significant advancements in system architectures, enabling more efficient processing and storage solutions that align with the increasing computational demands of modern applications. As the market for NVM continues to grow, driven by innovations in semiconductor technology and the proliferation of Internet of Things (IoT) devices, understanding their impact on computer architecture becomes crucial for future developments
Author: Muthukumaran Vaithianathan
Institution: Samsung Semiconductor (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4411609200