Work

van der Waals epitaxial growth of hexagonal boron nitride on graphene for enhanced deep ultraviolet sensing performance

Year: 2025

Type: article

Abstract: Achieved wafer-scale van der Waals growth of 2D h-BN on graphene via MOCVD. Developed graphene buffer layer for uniform h-BN growth. Improved DUV photodetector performance using h-BN/graphene heterostructure.

Source: Materials Advances

DOI: 10.1039/d5ma00044k

Authors: Hoang Hung Nguyen, Seongjun Kim, Tran Viet Cuong, Huynh Tran My Hoa, Anh Hao Huynh Vo, Thien Trang Nguyen, Kang Bok Ko, Young Jae Park

Institutions: Trường ĐH Nguyễn Tất Thành, Pohang University of Science and Technology, Jeonbuk National University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,962

Funders: Trường Đại học Nguyễn Tất Thành, National Research Foundation, National Research Foundation of Korea, Ministry of Science and ICT, South Korea

Awards: G248902062, G3499202458, G3846980675, G5519341612, G7417017686

OpenAlex ID: W4411722012

FWCI: 0.208

Cites: 53

Cited by: 1

Related to: 10