Work

A High-Performance In-Memory Multi-Bit Adder Based on TST-MRAM

Year: 2025

Type: conference-paper

Source: IEEE International Symposium on Circuits and Systems proceedings

DOI: 10.1109/iscas56072.2025.11043884

Authors: Erya Deng, Zhongkun Shen, Yu Gong, Weiqiang Liu

Institution: Nanjing University of Aeronautics and Astronautics

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities

OpenAlex ID: W4411724935

FWCI:

Cites: 18

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Related to: 10