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Penta Interlocking Dual Ports 14T SRAM with Inside-Bit interleaving Layout Isolation for Soft Error Recovery

Year: 2025

Type: conference-paper

Source: IEEE International Symposium on Circuits and Systems proceedings

DOI: 10.1109/iscas56072.2025.11043419

Authors: Xu Luo, Yuanyuan Han, Xu Cheng, Xiaoyang Zeng

Institutions: Fudan University, Shanghai Zhangjiang Laboratory, Zhangjiang Laboratory

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Research and Development

OpenAlex ID: W4411725504

FWCI:

Cites: 14

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Related to: 10