Work

A 1Mb RRAM Macro with Bipolar Forming for Improved Programming Yield and Cell-by-cell Write Verification Scheme

Year: 2025

Type: conference-paper

Source: IEEE International Symposium on Circuits and Systems proceedings

DOI: 10.1109/iscas56072.2025.11043651

Authors: Byungkwon An, Junjie Mu, Putu Andhita Dananjaya, Weng Hong Lai, Wen Siang Lew, Tony Tae-Hyoung Kim

Institution: Nanyang Technological University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Education

OpenAlex ID: W4411725568

FWCI:

Cites: 25

Cited by:

Related to: 10