Work

First Demonstration of ε-Ga₂O₃/α-Ga₂O₃ HFET With a Sn-Doped Channel

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3584033

Authors: Han-Yin Liu, Ko-Fan Hu, Nei-En Chiu, Chun-Chien Lo, Zhong-Cheng Shen

Institution: National Sun Yat-sen University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: National Science and Technology Council

Awards: G2954147268, G7014205454, G7324364324

OpenAlex ID: W4411725652

FWCI: 0.803

Cites: 27

Cited by: 5

Related to: 10