Work

Analysis and Comparison of various Leakage power control techniques for 6T SRAM using 18 nm FinFET Technology

Year: 2025

Type: conference-paper

Source: International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI)

DOI: 10.1109/raeeucci63961.2025.11048354

Authors: P. Vijayaraghavan, G. Durga, T. Swetha

Institution: Sri Sivasubramaniya Nadar College of Engineering

Language: English

Topic: Low-power high-performance VLSI design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411726318

FWCI:

Cites: 11

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Related to: 10