Work

On the ESD Protection for 10V-Compliant Neural Stimulator in 65nm CMOS Technology

Year: 2025

Type: conference-paper

Source: IEEE International Symposium on Circuits and Systems proceedings

DOI: 10.1109/iscas56072.2025.11044275

Authors: Naef Ahmad, Sandip Lashkare, Laxmeesha Somappa

Institutions: Indian Institute of Technology Bombay, Indian Institute of Technology Gandhinagar

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Good health and well-being

Open Access status: closed

OpenAlex ID: W4411726501

FWCI: 7.075

Cites: 8

Cited by: 3

Related to: 10