Work

Performance and Parameter Optimization of GaN/InN/GaN TFET for Low-Power Applications in Sub-10nm Technology nodes

Year: 2025

Type: conference-paper

Source: International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI)

DOI: 10.1109/raeeucci63961.2025.11048311

Authors: Sasidhar Malladi, Sukivassan R, Kishore R, Md Jawaid Alam

Institution: SRM Institute of Science and Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4411726509

FWCI:

Cites: 10

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Related to: 10