TNURML: Triple-Node-Upset-Recovery Magnetic Latch Design with Non-Volatility for Aerospace Applications
Year: 2025
Type: conference-paper
Abstract: As semiconductor technology advances, radiative-particle-induced soft errors and power consumption are becoming major concerns for digital circuits in aerospace applications. Radiation hardening by design and magnetic tunnel junctions (MTJs) are widely employed to address these concerns. In this paper, a novel latch, called TNURML, that can completely recover from triple-node upsets (TNUs), is proposed. The embedded MTJs provide non-volatility and are compatible with traditional CMOS processes. The TNURML employs a TNU-recovery module as well as a pair of MTJs for backup and recovery operations. Extensive simulations demonstrate the excellent TNU-recovery capability and non-volatility of the TNURML latch at the cost of slightly increased area overhead. The proposed TNURML latch reduces 43.63% of delay and 48.23% of power on average when compared to the state-of-the-art latches.
Authors: Aibin Yan, Zhiyuan Pei, Xing Guo, Jie Song, Cuiyun Jiang, Huaguo Liang, Xiaoqing Wen, Patrick Girard
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Funder: Nature
OpenAlex ID: W4411726661
