Work

Stress-dependent MOSFET Model Valid in All Operating Regions For Use in Circuit Simulations

Year: 2025

Type: conference-paper

Source: IEEE International Symposium on Circuits and Systems proceedings

DOI: 10.1109/iscas56072.2025.11043307

Authors: Andro Žamboki, Leo Gočan, Josip Mikulić, Gregor Schatzberger, Tvrtko Mandić, Adrijan Barić

Institutions: University of Zagreb, Faculty of Electrical Engineering and Computing in Zagreb, AMS (Austria)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411727612

FWCI: 4.554

Cites: 13

Cited by: 2

Related to: 10