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The Challenges of Graphene Nanoribbons for MOSFET Channel

Year: 2025

Type: article

Abstract: Graphene nanoribbon (GNR) has been reported as a solution for Graphene’s zero bandgap problem as channel material for Metal Oxide Semiconductor Field Effect Transistor (MOSFET). By quantum confinement and atom engineering, GNR provides seemingly new hope for maintaining the advantages of Graphene while solving bandgap problems. However, GNR-based MOSFETs face a number of challenges that need to be addressed to fully utilize their potential. In this paper, we discuss the challenges associated with using GNR as the material for MOSFET channel.

Source: Applied and Computational Engineering

DOI: 10.54254/2755-2721/2025.24441

Authors: Yuwei Tong, Duoyuan Chen, Yuxin Wu, Jinghui Dong, Chongzhi Jiao

Institutions: University of Manchester, Wuhan University, Nankai University, University of Rochester, Shandong University

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4411777015

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