Work

Performance of ZnS and ZnSe Doped on Cu2+ for Photovoltaic Devices

Year: 2025

Type: article

Abstract: This study utilizes passive ZnS@Cu2+ and ZnSe@Cu2+ layers deposited on the CdS and CdSe quantum dots to reduce dark current and enhance photon absorption. The films were fabricated utilizing the successive ionic layer adsorption and reaction technique with an optimized and suitable Cu/Zn doping ratio. Ultraviolet–visible spectroscopy, X-ray diffraction, and field emission scanning electron microscopy analyses indicate a change in the absorption edge within the visible light region when ZnS and ZnSe are doped with Cu2+ ions. Power conversion efficiency measurements reveal that the ZnSe@Cu2+ photoelectrode increases the current density (JSC ~23 mA.cm-2) compared to ZnS@Cu2+ The photoelectrode exhibits a short-circuit current density (JSC ≈ 22 mA · cm−2), leading to improved conversion efficiency. It also shows the lowest charge transfer resistance (Rct2 = 33 − Ω), indicating efficient interfacial kinetics in the photoelectrode suggests more efficient electron transport and reduced recombination.

Source: Science & Technology Indonesia

DOI: 10.26554/sti.2025.10.3.952-957

Authors: Le Xuan Thuy, Ha Thanh Tung, Le Tien Dat, Le Minh Nhan

Institutions: Vinh Long University of Technology Education, Can Tho University of Medicine and Pharmacy

Language: English

Topic: Quantum Dots Synthesis And Properties

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: gold

Estimated APC paid: $200