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Ab initio quantum transport simulation of the sub-1 nm gate-length monolayer and bilayer α-MoTe 2 field-effect transistors

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Year: 2025
Type: article
Source: Journal of Materials Chemistry C
DOI: 10.1039/d5tc01702e
Authors: Mudasser Husain, Younas Ahmed, Xingyue Yang, Shibo Fang, Zongmeng Yang, Jichao Dong, Linqiang Xu, Nasir Rahman, Jing Lu
Institutions: Peking University, Singapore University of Technology and Design, The university of Lakki Marwat, Collaborative Innovation Center of Quantum Matter
Language: English

Topic: 2D Materials and Applications
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation Singapore, National Natural Science Foundation of China, Peking University, Fundamental Research Funds for the Central Universities
Awards: G2820044590, G5912457628, G5989642111
OpenAlex ID: W4411795998
FWCI: 0.623
Cites: 58
Cited by: 3
Related to: 10
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