Ab initio quantum transport simulation of the sub-1 nm gate-length monolayer and bilayer α-MoTe 2 field-effect transistors
Year: 2025
Type: article
Source: Journal of Materials Chemistry C
DOI: 10.1039/d5tc01702e
Authors: Mudasser Husain, Younas Ahmed, Xingyue Yang, Shibo Fang, Zongmeng Yang, Jichao Dong, Linqiang Xu, Nasir Rahman, Jing Lu
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G2820044590, G5912457628, G5989642111
OpenAlex ID: W4411795998
