Work

Electrical Transport at n-Ga2O3/n-SiC Hetero-Interface Constructed by Hydrophilic and Surface Activated Bonding

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040998

Authors: Zhenyu Qu, Wenhui Xu, Haodong Jiang, Tiancheng Zhao, Yeliang Wang, Haowen Guo, Xinbo Zou, Min Zhou, Tiangui You, Xin Ou

Institutions: Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, ShanghaiTech University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

Funders: National Natural Science Foundation of China, Science and Technology Commission of Shanghai Municipality

Awards: G7299848508, G7699155147

OpenAlex ID: W4411799096

FWCI:

Cites: 14

Cited by:

Related to: 10