Work

Van Der Waals Epitaxy h-BN/AlN Back Barrier with Controllable Boron-Diffusion for High-Erformance AlGaN/GaN HEMTs

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041451

Authors: Haidi Wu, Jing Ning, Jincheng Zhang, Yue Hao

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, National Science Fund for Distinguished Young Scholars

Awards: G1917464436, G2204112166, G4397355337

OpenAlex ID: W4411799115

FWCI: 2.591

Cites: 16

Cited by: 1

Related to: 10