Work

975V/4.3M $\Omega \cdot \text{cm}^{2}$ Enhancement-Mode (001) $\beta-\text{Ga}_{2} \mathrm{O}_{3}$ Vertical Multi-Fin Power Transistors

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040853

Authors: Gaofu Guo, Xiaodong Zhang, Chunhong Zeng, Tiwei Chen, Zhili Zou, Zheyuan Hu, Zhucheng Li, Dengrui Zhao, Yuhua Sun, Xianqi Dai, Baoshun Zhang

Institutions: Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics, Henan Normal University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, Chinese Academy of Sciences, Fund for Key Laboratory Construction of Hubei Province, Suzhou Institute of Nanotechnology, Chinese Academy of Sciences, National Key Research and Development Program of China

Awards: G3159869157, G4852859507, G6428087383

OpenAlex ID: W4411799124

FWCI: 30.68

Cites: 10

Cited by: 6

Related to: 10