Work

Investigation of Enhanced Robustness Against Floating-Substrate-Induced Dynamic RON Degradation in 900-V p-GaN Gate HEMT Using Virtual-Body Technology

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040628

Authors: Hao Chang, Junjie Yang, Jingjing Yu, Jiawei Cui, Youyi Yin, Han Yang, Xuelin Yang, Jinyan Wang, Maojun Wang, Bo Shen, Jin Wei

Institution: Peking University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G8130179350

OpenAlex ID: W4411799138

FWCI: 5.03

Cites: 14

Cited by: 2

Related to: 10