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2D Novel Antiferroelectric Materials for Neuromorphic Computing

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040793

Authors: Dongliang Yang, Linfeng Sun

Institution: Beijing Institute of Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799145

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Cites: 20

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Related to: 10