Work

Boosted Performance of Atomic-Layer-Deposited Dual-Gate Indium-Gallium-Zinc-Oxide Transistors

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040472

Authors: Anyu Tong, Qianlan Hu, Min Zeng, Yuzhe Zhu, Wenjie Zhao, Zhiyu Wang, Yanqing Wu

Institutions: Peking University, Huazhong University of Science and Technology

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G3523857918, G8095157084

OpenAlex ID: W4411799161

FWCI: 2.358

Cites: 2

Cited by: 1

Related to: 10