Work

The Ultra-Thin Al2O3 Oxide Layer via ALD Repaired Si Channel Interface and Optimizied Subthreshold Characteristics and Reduced Leakage Current by 96.2%

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041682

Authors: Renjie Jiang, Peng Wang, Lianlian Li, Qinkun Li, Zhongrui Wang, Hang Zhang, Huaxiang Yin, Qingzhu Zhang

Institutions: Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799170

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Cites: 13

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Related to: 10