Work

Device Considerations for GaN Power Switching Transistors from Application and Reliability Perspectives (Invited)

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041428

Authors: Zhikai Tang, Maik Peter Kaufmann, Sandeep Bahl, Chang Soo Suh, Jungwoo Joh, Dong Seup Lee, Tim Merkin, Jeffrey Morroni

Institutions: Texas Instruments (United States), Texas Instruments (Germany)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4411799185

FWCI:

Cites: 11

Cited by:

Related to: 10