Work

Temperature-Dependent Characteristics of Field-Effect Mobility in MOCVD-Grown β-Ga2O3MOSFETs on Sapphire Substrate

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040329

Authors: Chunxiao Yu, Yibo Wang, Yiyang Wu, Jun Zheng, Chenyu Liu, Xiaole Jia, Bochang Li, Haodong Hu, Cize Fang, Yan Liu, Yue Hao, Genquan Han

Institutions: Xidian University, Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G8553384389

OpenAlex ID: W4411799207

FWCI:

Cites: 14

Cited by:

Related to: 10