Work

Compact Modeling of GaN Based RF Switches: Invited Paper

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041454

Authors: Yogesh Singh Chauhan, Mir Mohammad Shayoub, Ahtisham Pampori, Mohammad Sajid Nazir

Institution: Indian Institute of Technology Kanpur

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799210

FWCI: 7.771

Cites: 10

Cited by: 3

Related to: 10