Work

Compact Modeling of Silicon Carbide (SiC) Power Fets

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041144

Authors: Karunesh Kumar Tripathi, Yogendra Machhiwar, Danish Raja, Harshit Agarwal

Institution: Indian Institute of Technology Jodhpur

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799225

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Cites: 13

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Related to: 10