Work

Yield and Reliability Optimization of Analog RRAM for In-Memory Computing on a 28nm CMOS Platform

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040276

Authors: Siyao Yang, Bin Gao

Institution: Tsinghua University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

Award: G864241454

OpenAlex ID: W4411799233

FWCI: 4.601

Cites: 2

Cited by: 2

Related to: 10