Work

Demonstration of EOT-Scaled Lg∼25 nm FinFET Based on Thickness-Proportion Controlled HfO 2 -ZrO 2 -HfO 2 Superlattice Gate Stacks

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041042

Authors: Kun Zhong, Zhaohao Zhang, Siyuan Liu, Haiyuan Lyu, Huaxiang Yin

Institutions: Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799237

FWCI:

Cites: 7

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Related to: 10