Work

High Density and High Reliability (H 2 DR) RRAM for Advanced Memory Technology

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040878

Authors: Zongwei Wang, Zimeng Wu, Lin Bao, Qishen Wang, Yuhang Yang, Shengyu Bao, Jingwei Sun, Cuimei Wang, Yimao Cai, Ru Huang

Institutions: Peking University, Beijing University of Posts and Telecommunications, State Key Laboratory of Information Photonics and Optical Communications

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799242

FWCI: 9.434

Cites: 10

Cited by: 4

Related to: 10