Work

Oxidation of TiN Interface and Improvement of AlN Intercalation of ZrO 2 Capacitor in DRAM

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11041570

Authors: Songming Miao, Xinyi Tang, Yuanbiao Li, Guangwei Xu, Di Lu, Shibing Long

Institution: University of Science and Technology of China

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G1221847750

OpenAlex ID: W4411799244

FWCI:

Cites: 7

Cited by:

Related to: 10