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Improved Linearity by Double-Channel GaN HEMTs with the Ultra-Thin AlN Barrier Layer

Year: 2025

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm61175.2025.11040879

Authors: Long Zhang, Qian Yu, Ling Yang, Meng Zhang, Chunzhou Shi, Xu Zou, Wenze Gao, Bin Hou

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411799255

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Cites: 8

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Related to: 10