The Demonstration of Scalable-HZO/ZrO2 FeFET With Large Memory Window of 2.3V for 3Bit-Per-Cell, Immediate Read After Write, High Endurance of 109 Cycles, and the High Accuracy of 92% for Machine Learning
Year: 2025
Type: conference-paper
Authors: S.-T. Huang, H.-M. Chen, Y.-T. Tsai, C.-S. Pai, Y.-T. Tang
Institution: National Central University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4411799262